2N5191 datasheet(1/4 Pages) CDIL

tên linh kiện	2N5191

Giải thích chi tiết về linh kiện	NPN EPITAXIAL SILICON POWER TRANSISTORS

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NPN EPITAXIAL SILICON POWER TRANSISTORS

2N5191

2N5192

TO126

Plastic Package

Use in Medium Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

2N5191

2N5192

UNIT

Collector -Base Voltage

VCBO

60

80

V

Collector -Emitter Voltage

VCEO

60

80

V

Emitter Base Voltage

VEBO

5V

Collector Current

IC

4A

Collector Peak Current

ICM

7A

Base Current

IB

1A

Total Dissipation @ TC<25 ºC

Ptot

40

W

Junction Temperature

Tj

150

ºC

Storage Temperature Range

Tstg

-65 to 150

ºC

Thermal Resistance

Junction to Case

Rth(j-c)

3.12

ºC/W

Junction to Ambient

Rth(j-a)

100

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Sustaining Voltage

VCEO*(sus) IC=100mA, IB=0

2N5191

60

-

V

2N5192

80

-

V

Collector Cut off Current

ICBO

VCB=rated VCBO, IE=0

-

0.1

mA

ICEX

VCE=rated VCEO,

-

0.1

mA

VBE=1.5V

VCE=rated VCEO,

--

2

mA

VBE=1.5V,TC=125 ºC

ICEO

VCE=rated VCEO, IB=0

--

1

mA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

--

1

mA

Collector Emitter Saturation Voltage

VCE(sat)*

IC=1.5A, IB=0.15A

-

0.6

V

IC=4A, IB=1A

-

1.4

V

Base Emitter Voltage

VBE*IC=1.5A, VCE=2V

-

1.2

V

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Số phần tương tự - 2N5191

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