AOB11N60L datasheet(2/5 Pages) AOSMD

2 / 5 page

AOB11N60

Symbol

Min

Typ

Max

Units

600

700

BVDSS

/∆TJ

0.67

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

3.3

3.9

4.5

RDS(ON)

0.6

0.7

Ω

gFS

VSD

0.73

Maximum Body-Diode Continuous Current

ISM

Ciss

1320

1656

1990

Coss

100

146

195

Crss

6.5

11.2

1.7

3.5

5.3

Ω

30.6

Qgs

9.6

Qgd

9.6

tD(on)

tD(off)

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

Gate Drain Charge

Total Gate Charge

VGS=10V, VDS=480V, ID=11A

Gate Source Charge

Static Drain-Source On-Resistance

VGS=10V, ID=5.5A

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-Off DelayTime

VGS=10V, VDS=300V, ID=11A,

RG=25Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-On Rise Time

Reverse Transfer Capacitance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

VDS=5V ID=250µA

VDS=480V, TJ=125°C

Zero Gate Voltage Drain Current

IDSS

Zero Gate Voltage Drain Current

VDS=600V, VGS=0V

BVDSS

ID=250µA, VGS=0V

µA

VDS=0V, VGS=±30V

Drain-Source Breakdown Voltage

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

IS=1A,VGS=0V

VDS=40V, ID=5.5A

Forward Transconductance

Diode Forward Voltage

tD(off)

trr

400

500

600

Qrr

4.7

5.9

7.1

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V

Turn-Off DelayTime

RG=25Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=11A,dI/dt=100A/µs,VDS=100V

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial

J =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. L=60mH, I

AS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C

Rev0: Jan 2012

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