CMLD2004G

SURFACE MOUNT SILICON

DUAL, ISOLATED

HIGH VOLTAGE

SWITCHING DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD2004G

contains two (2) isolated high voltage silicon switching

diodes, manufactured by the epitaxial planar process,

epoxy molded in an SOT-563 surface mount package.

These devices are designed for applications requiring

high voltage capability.

MARKING CODE: DG

SOT-563 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

240

V

Peak Repetitive Reverse Voltage

VRRM

300

V

Peak Repetitive Reverse Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Peak Forward Surge Current, tp=1.0μs

IFSM

4.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=240V

100

nA

IR

VR=240V, TA=150°C

100

μA

BVR

IR=100μA

300

V

VF

IF=100mA

1.0

V

CJ

VR=0, f=1.0MHz

5.0

pF

trr

IF=IR=30mA, Irr=3.0mA, RL=100Ω

50

ns

R1 (17-January 2014)

www.centr a lsemi.com