STGPL6NC60DI datasheet(4/18 Pages) STMICROELECTRONICS

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Electrical characteristics

STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI

4/18

Doc ID 15536 Rev 2

Electrical characteristics

(Tj=25 °C unless otherwise specified)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 1.5 A

VGE = 15 V, IC= 3 A

VGE= 15 V, IC= 3 A,Tj=125°C

1.9

2.2

2.9

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, Tj= 125 °C

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

±100

gfs

Forward transconductance

VCE = 15 V, IC= 3 A

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

208

32.5

5.4

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 3 A,

VGE = 15 V

(see Figure 17)

2.6

4.9

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