STW38N65M5 datasheet(6/22 Pages) STMICROELECTRONICS

tên linh kiện	STW38N65M5

Giải thích chi tiết về linh kiện	N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

PDF	22 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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Electrical characteristics

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5

6/22

DocID022851 Rev 3

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d (v)

r (v)

f (i)

c(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

= 400 V, I

= 20 A,

= 4.7

Ω, V

= 10 V

(see

Figure 21 and

Figure 24)

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

SDM

(1)

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

120

(2)

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

= 30 A, V

= 0

1.5

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

= 30 A, di/dt = 100 A/μs

= 100 V (see

Figure 24)

382

6.6

μC

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

= 30 A, di/dt = 100 A/μs

= 100 V, T

= 150 °C

(see

Figure 24)

522

10.3

μC

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