HSMP-3866 datasheet(2/6 Pages) AVAGO

2 / 6 page

Absolute Max Ratings [1], Tc = +25°C

Symbol

Parameter

Unit

Abs Max

ForwardCurrent(1

µsPulse)

Amp

PIV

PeakInverseVoltage

JunctionTemperature

°C

150

Tstg

StorageTemperature

°C

-65to150

qjb

ThermalResistance[2]

°C/W

167

Notes:

1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothedevice.

2. ThermalResistanceismeasuredfromjunctiontoboardusingIRmethod.

Electrical Specifications, Tc = +25°C (Each Diode)

Minimum Breakdown Voltage

VBR (V)

Typical Series Resistance

RS (W)

Typical Total Capacitance

CT (pF)

3.0/1.5*

0.22

TestCondition

VR=VBR

MeasureIR≤10µA

IF=10mA,f=100MHz

IF=100mA*

VR=50V

f=1MHz

Typical Performance for HSMP-3866 Quad PIN Diode

π Attenuator @ +25°C

Parameter

Test Condition

Units

Typical

InsertionLoss

Vc=5V,V+=1.2V,Freq=1GHz

-2.5

ReturnLoss

Vc=0V,V+=1.2V,Freq=1GHz

-18

Attenuation

Vc=0V,V+=1.2V,Freq=1GHz

IP3

Vc=1.5V,V+=1.2V,Freq=1GHz

dBm

IP3

Vc=5.0V,V+=1.2V,Freq=1GHz

dBm

IP3

Vc=1.5V,V+=1.2V,Freq=300MHz

dBm

IP3

Vc=5.0V,V+=1.2V,Freq=300MHz

dBm

IP3

Vc=1.5V,V+=1.2V,Freq=100MHz

dBm

IP3

Vc=5.0V,V+=1.2V,Freq=100MHz

dBm

Notes:

1. MeasurementaboveobtainedusingWidebandRFcircuitdesignshowninFigure1&2

Typical Performance, Tc = +25°C (Each Diode)

Total Resistance

RT (W)

Carrier Lifetime

t(ns)

Reverse Recovery Time

Trr (ns)

Total Capacitance

CT (pF)

500

0.22

TestCondition

IF=1mA

f=1MHz

IF=10mA

IR=250mA

VR=50V

IF=10mA

90%Recovery

VR=50V

f=1MHz

HSMP-3866 bảng dữ liệu(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED

HSMP-3866 bảng dữ liệu(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL