2SD1615 datasheet(1/4 Pages) NEC

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SILICON TRANSISTORS

2SD1615, 2SD1615A

Document No. D10198EJ3V0DSD0 (3rd edition)

(Previous No. TC-5810A)

Date Published June 1995 P

Printed in Japan

NPN SILICON EPITAXIAL TRANSISTORS

POWER MINI MOLD

DESCRIPTION

2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially

in Hybrid Integrated Circuits.

FEATURES

•

World Standard Miniature Package

•

Low VCE (sat) VCE(sat) = 0.15 V

•

Complement to 2SB1115, 2SD1115A

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (TA = 25 ˚C)

2SD1615

2SD1615A

Collector to Base Voltage

VCBO

60

120

V

Collector to Emitter Voltage

VCEO

50

60

V

Emitter to Base Voltage

VEBO

6A

Collector Current (DC)

IC

1A

Collector Current (Pulse)*

IC

2A

Maximum Power Dissipation

Total Power Dissipation

at 25 ˚C Ambient Temperature** PT

2.0

W

Maximum Temperatures

Junction Temperature

Tj

150

˚C

Storage Temperature Range

Tstg

–55 to +150

˚C

* PW

≤ 10 ms, Duty Cycle ≤ 50 %

** When mounted on ceramic substrate of 16 cm2

× 0.7 mm

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

100

nA

2SD1615

VCB = 60 V, IE = 0

100

nA

2SD1615A

VCB = 120 V, IE = 0

Emitter Cutoff Current

IEBO

100

nA

VEB = 6.0 V, IC = 0

DC Current Gain

hFE1***

135

290

600

2SC1615

VCE = 2.0 V, IC = 100 mA

135

400

2SD1615A

DC Current Gain

hFE2***

81

270

VCE = 2.0 V, IC = 1.0 A

Collector Saturation Voltage

VCE(sat)***

0.15

0.3

V

IC = 1.0 A, IB = 50 mA

Base Saturation Voltage

VBE(sat)***

0.9

1.2

V

IC = 1.0 A, IB = 50 mA

Base to Emitter Voltage

VBE***

600

700

mV

VCE = 2.0 V, IC = 50 mA

Gain Bandwidth Product

fT

80

160

MHz

VCE = 2.0 V, IE = –100 mA

Output Capacitance

Cob

19

pF

VCB = 10 V, IE = 0, f = 1.0 MHz

*** Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2 %

hFE Classification

MARKING

2SD1615

GM

GL

GK

2SD1615A

GQ

GP

hFE

135 to 270

200 to 400

300 to 600

©

1985

DATA SHEET

C

EB

4.5±0.1

1.6±0.2

0.42±0.06

0.42

±0.06

1.5±0.1

1.5

3.0

0.41

+0.03

– 0.05

1. Emitter

2. Collector

3. Base

0.47

±0.06

PACKAGE DIMENSIONS

in millimeters

Số phần tương tự - 2SD1615

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Guangdong Kexin Industr...	2SD1615	52Kb / 1P	NPN Silicon Epitaxial Transistor
Renesas Technology Corp	2SD1615	210Kb / 6P	Old Company Name in Catalogs and Other Documents
Renesas Technology Corp	2SD1615	210Kb / 6P	Old Company Name in Catalogs and Other Documents
SHIKUES Electronics	2SD1615	721Kb / 1P	World Standard Miniature Package
Shanghai Leiditech Elec...	2SD1615	560Kb / 1P	World Standard Miniature Package

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Renesas Technology Corp	2SD1950-T1-AZ	1Mb / 6P	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
	2SC3554	1Mb / 6P	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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