SST3585S datasheet(2/7 Pages) SECOS

2 / 7 page

Elektronische Bauelemente

SST3585S

3.5A, 20V, RDS(ON) 75mΩ

Ω

-2.5A, -20V, RDS(ON) 160mΩ

Ω

N And P-Channel Enhancement Mode Power MOSFET

25-Mar-2014 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

N-Ch

VGS=0, ID=250µA

Drain-Source Breakdown

Voltage

P-Ch

BVDSS

-20

VGS=0, ID= -250µA

N-Ch

0.02

Reference to 25°C, ID=1mA

Breakdown Voltage Temp.

Coefficient

P-Ch

△BVDSS/△TJ

-0.01

V/°C

Reference to 25°C, ID= -1mA

N-Ch

0.5

1.2

VDS=VGS, ID=250µA

Gate-Threshold Voltage

P-Ch

VGS(th)

-1.2

VDS=VGS, ID= -250µA

N-Ch

VDS=5V, ID=3A

Forward Transconductance

P-Ch

gfs

VDS= -5V, ID= -2A

N-Ch

±100

VGS= ±12V

Gate-Source Leakage Current

P-Ch

IGSS

±100

VGS= ±12V

N-Ch

VDS=20 V, VGS=0

P-Ch

-1

VDS= -20 V, VGS=0

N-Ch

VDS=16V, VGS=0

Drain-Source Leakage Current

P-Ch

IDSS

-25

µA

VDS= -16V, VGS=0

N-Ch

VGS=4.5V, ID=3.5A

P-Ch

160

VGS= -4.5V, ID= -2.5A

N-Ch

125

VGS=2.5V, ID=1.2A

Drain-Source On-Resistance

P-Ch

RDS(ON)

300

VGS= -2.5V, ID= -2A

N-Ch

Total Gate Charge

P-Ch

N-Ch

0.7

Gate-Source Charge

P-Ch

Qgs

N-Ch

Gate-Drain Charge

P-Ch

Qgd

N-Channel

VDS=16V, VGS=4.5V, ID=3A

P-Channel

VDS= -16V, VGS= -4.5V, ID= -2A

N-Ch

Turn-on Delay Time

P-Ch

Td(on)

N-Ch

Rise Time

P-Ch

N-Ch

Turn-off Delay Time

P-Ch

Td(off)

N-Ch

Fall Time

P-Ch

N-Channel

VDS=15V, RG=3.3 ,RD=15

VGS=5V, ID=1A

P-Channel

VDS= -10V, RG=3.3 ,RD=10

VGS= -10V, ID= -1A

N-Ch

430

520

Input Capacitance

P-Ch

Ciss

630

750

N-Ch

Output Capacitance

P-Ch

Coss

N-Ch

Reverse Transfer Capacitance

P-Ch

Crss

N-Channel

VGS=0, VDS=20V, f=1.0MHz

P-Channel

VGS=0, VDS= -20V, f=1.0MHz

N-Ch

1.4

1.7

Gate Resistance

P-Ch

f=1.0MHz

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