MP02TT200

3/9

www.dynexsemi.com

Units

mA

V/

µs

A/

µs

V

m

Ω

Test Conditions

At V

To 67% V

From 67% V

t

At T

At T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS

Symbol

I

dV/dt

dI/dt

V

T(TO)

r

T

Max.

30

1000

500

0.98

0.75

Min.

-

-

-

-

-

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

V

T

At V

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3

150

0.25

30

0.25

5

10

100

5

Units

V

mA

V

V

V

V

A

W

W

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.