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MA9264 bảng dữ liệu(PDF) 3 Page - Dynex Semiconductor

tên linh kiện MA9264
Giải thích chi tiết về linh kiện  Radiation Hard 8192x8 Bit Static RAM
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MA9264 bảng dữ liệu(HTML) 3 Page - Dynex Semiconductor

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MA9264
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CHARACTERISTICS AND RATINGS
Symbol
Parameter
Min.
Max.
Units
VCC
Supply Voltage
-0.5
7.0
V
VI
Input Voltage
-0.3
VDD+0.3
V
TA
Operating Temperature
-55
125
°C
TS
Storage Temperature
-65
150
°C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose
radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request). GROUP A
SUBGROUPS 1, 2, 3.
Symbol
Parameter
Conditions
(Option)
Min.
Typ.
Max.
Units
VDD
Supply voltage
-
4.5
5.0
5.5
V
VlH
Logical ‘1’ Input Voltage
-
(TTL)
VDD/2
-
VDD
V
(CMOS)
0.8 VDD
-VDD
V
VlL
Logical ‘0’ Input Voltage
-
(TTL)
VSS
-
0.8
V
(CMOS)
VSS
-
0.2 VDD
V
VOH1
Logical ‘1’ Output Voltage
IOH1 = -2mA
2.4
-
-
V
VOH2
Logical ‘1’ Output Voltage
IOH2 = -1mA
VDD -0.5
-
-
V
VOL
Logical ‘0’ Output Voltage
IOL = 4mA
-
-
0.4
V
ILI
Input Leakage Current
VIN = VDD or VSS All inputs
-
-
±10
µA
ILO
Output Leakage Current
Chip disabled, VOUT = VDD or VSS
--
±10
µA
ISB1
Selected Static Current (CMOS)
All inputs = VDD -0.2V
-
0.1
10
mA
except
CS = VSS +0.2V
IDD
Dynamic Operating Current
fRC = 1MHz, all inputs
-
6
18
mA
(CMOS)
switching, VIH = VDD -0.2V
ISB2
Standby Supply Current
CS = VDD -0.2V
-
0.1
10
mA
CE = VSS +0.2V
Figure 4: Electrical Characteristics
Symbol
Parameter
Conditions
(Option)
Min.
Typ.
Max.
Units
VDR
VCC for Data Retention
CS = VDR, CE = VSS
2.0
-
-
V
IDDR
Data Retention Current
CS = VDR, VDR = 2.0V
-
0.05
4
mA
CE = VSS
Figure 5: Data Retention Characteristics



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