2SC5182 datasheet(1/12 Pages) NEC

tên linh kiện	2SC5182

Giải thích chi tiết về linh kiện	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5182

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

•

Low noise

•

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

•

NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Mini-Mold package

EIAJ: SC-59

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5182-T1

Embossed tape, 8 mm wide,

Pin No. 3 (Collector)

facing the perforations

2SC5182-T2

3 000 units/reel

Embossed tape, 8 mm wide,

Pins No. 1 (Emitter) and No. 2 (Base)

facing the perforations

* Contact your NEC sales representative to order samples for evaluation

(available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12106EJ2V0DS00 (2nd edition)

(Previous No. TC-2479)

Date Published November 1996 N

Printed in Japan

PACKAGE DIMENSIONS

(Units: mm)

1.5

2.8±0.2

0.65 –0.15

+0.1

3

2

1

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Số phần tương tự - 2SC5182

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NEC	2SC5182	196Kb / 21P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Renesas Technology Corp	2SC5182	187Kb / 14P	SILICON TRANSISTOR 1994
	2SC5182-T1	187Kb / 14P	SILICON TRANSISTOR 1994
	2SC5182-T2	187Kb / 14P	SILICON TRANSISTOR 1994

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Mô tả tương tự - 2SC5182

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NEC	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5179	57Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

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