2SC5181 datasheet(1/8 Pages) NEC

tên linh kiện	2SC5181

Giải thích chi tiết về linh kiện	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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SILICON TRANSISTOR

FEATURES

•

Low current consumption and high gain

|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz

•

Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5181

50 units/box

2SC5181-T1

3 000 units/reel

*

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

30

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

2SC5181

Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

1.6 ± 0.1

0.8 ± 0.1

3

2

1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

PACKAGE DIMENSIONS

(Units: mm)

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Số phần tương tự - 2SC5181

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Renesas Technology Corp	2SC5181	1Mb / 10P	SILICON TRANSISTOR 1994
Renesas Technology Corp	2SC5181-T1	1Mb / 10P	SILICON TRANSISTOR 1994

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Mô tả tương tự - 2SC5181

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NEC	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5179	57Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5182	56Kb / 12P	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5436	77Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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