ASML-5822 datasheet(2/6 Pages) AVAGO

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Table 1. Absolute Maximum Rating [1] Tc = +25°C

Symbol

Parameter

Units

Absolute Max.

for PIN Diode

Absolute Max.

for Schottky DIode

Forward Current (1

µs Pulse)

Amp

PIV

Peak Inverse Voltage

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

θJC

Thermal Resistance [2]

°C/W

500

Notes:

1. Operation in excess of anyone of these conditions may result in permanent damage to the device.

2. TC = 25°C, TC where is defined to be the temperature at the package pins where contacts is made to the circuit board.

Table 2. Electrical Specifications, Tc = +25°C, PIN diode

Symbol

Parameter and Test Condition

Units

Min.

Typ

Max.

VBR

Breakdown Voltage, IR ≤ 10µA

–

Forward Voltage, IF = 100mA

–

0.93

–

Typical Series Resistance, Freq = 100MHz & IF = 1mA

Ohm

–

1.2

–

Typical Series Resistance, Freq = 100MHz & IF = 10mA

Ohm

–

0.5

0.6

Typical Total Capacitance, Freq = 1MHz & VR = 0V

–

0.9

–

Typical Total Capacitance, Freq = 1MHz & VR = 20V

–

0.53

0.8

Carrier Lifetime @ IF =10mA & IR =6mA

–

Table 3. Electrical Specifications, Tc = +25°C, Schottky diode

Symbol

Parameter and Test Condition

Units

Min.

Typ

Max.

VBR

Breakdown Voltage, IR ≤ 100µA

–

Reverse Leakage Current @ VBR = 1V

–

100

Forward Voltage, IF = 1mA

–

0.32

0.34

Forward Voltage, IF = 10mA

–

0.45

0.50

Typical Total Capacitance, Freq = 1MHz & VR = 0V

–

0.7

1.0

Typical Dynamic Resistance, IF =5mA

Ohm

–

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