D

S23019 Rev. E-2

1 of 2

MBR4030PT - MBR4060PT

MBR4030PT - MBR4060PT

40A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

K

S

M

H

R

D

C

Q

P*

*2 Places

TO-3P

Dim

Min

Max

A

3.20

3.50

B

4.59

5.16

C

20.80

21.30

D

19.70

20.20

E

2.10

2.40

G

0.51

0.76

H

15.90

16.40

J

1.70

2.70

K

3.10

Æ

3.30

Æ

L

3.50

4.51

M

5.20

5.70

N

1.12

1.22

P

1.93

2.18

Q

2.97

3.22

R

11.70

12.80

S

4.30 Typical

All Dimensions in mm

·

Schottky Barrier Chip

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

Voltage Drop

·

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

·

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

·

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Marking: Type Number

·

Weight: 5.6 grams (approx.)

·

Mounting Position: Any

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

4030PT

MBR

4035PT

MBR

4040PT

MBR

4045PT

MBR

4O50PT

MBR

4060PT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

30

35

40

45

50

60

V

RMS Reverse Voltage

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

°C

(Note 1)

40

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

400

A

Forward Voltage Drop

°C

°C

0.70

0.60

0.80

0.70

V

Peak Reverse Current

°C

at Rated DC Blocking Voltage

°C

1.0

100

mA

Typical Junction Capacitance

(Note 2)

1100

pF

Typical Thermal Resistance Junction to Case

(Note 1)

1.4

K/W

dV/dt

10,000

V/

ms

Operating and Storage Temperature Range

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.