DATA SHEET

SILICON TRANSISTOR

2SC4536

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL

TRANSISTOR

DATA SHEET

Document No. P10369EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1994

©

DESCRIPTION

The 2SC4536 is designed for use in middle power, low distortion low

noise figure RF amplifier. It features excellent linearity and large dynamic

range, which make it suitable for CATV, telecommunication, and other use,

it employs plastic surface mount type package (SOT-89).

FEATURES

• Low Distortion

• Low Noise

NF = 1.5 dB TYP.

• Power Mini Mold Package Used.

High Power Dissipation.

C)

C)

Collector to Base Voltage

30

V

Collector to Emitter Voltage

15

V

Emitter to Base Voltage

3.0

V

Collector Current

250

mA

Maximum Power Dissipation

Total Power Dissipation

at 25

2.0

W

Maximum Temperatures

Junction Temperature

150

C

Storage Temperature Range

65 to +150

C

* 0.7 mm

PACKAGE DIMENSIONS

(Unit: mm)

Term, Connection

E

C

B

(SOT-89)

: Emitter

: Collector (Fin)

: Base

0.41

−0.03

+0.05

0.47

±0.06

0.42±0.06

0.42

±0.06

4.5±0.1

1.6±0.2

3.0

EB

C

1.5

1.5±0.1