DMBT9922 datasheet(1/1 Pages) DIODES

tên linh kiện	DMBT9922

Giải thích chi tiết về linh kiện	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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nhà sản xuất	DIODES [Diodes Incorporated]

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D

S30126 Rev. 2P-5

1 of 1

DMBT9922

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Ideal for Medium Power Amplification and

Switching

·

High Current Gain

·

Complement to DMBT9022

Characteristic

Symbol

DMBT9922

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current - Continuous (Note 1)

IC

-100

mA

Power Dissipation (Note 1)

Pd

225

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

556

K/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

C

E

B

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: K2S

·

Weight: 0.008 grams (approx.)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.19

1.40

C

2.10

2.50

D

0.89

1.05

E

0.45

0.61

G

1.78

2.05

H

2.65

3.05

J

0.013

0.15

K

0.89

1.10

L

0.45

0.61

M

0.076

0.178

All Dimensions in mm

Notes:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

£ 300ms, duty cycle £ 2%.

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

-50

¾

V

-IC = 50

mA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-40

¾

V

-IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

¾

V

-IE = 50

mA, IC = 0

Collector Cutoff Current

ICBO

¾

-500

nA

VCB = -30V

Emitter Cutoff Current

IEBO

¾

-500

nA

VEB = -4.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

300

600

¾

IC = -1.0mA, VCE = -6.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

-0.5

V

IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

2.0 Typ.

3.5

pF

VCB = -12V, f = 1.0MHz, IE = 0

Current Gain-Bandwidth Product

fT

140 Typ.

¾

MHz

VCE = -12V, IC = -2.0mA,

f = 100MHz

Số phần tương tự - DMBT9922

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