GSFA1606 datasheet(1/2 Pages) THINKISEMI

tên linh kiện	GSFA1606

Giải thích chi tiết về linh kiện	16.0 Ampere Isolated Pkg General Purpose Rectifier for PhotoVoltaic

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Features

Low forward voltage drop

Glass passivated chip junction

High current capability

Case: Insulated ITO-220AC Full Plastic Pak

High surge current capability

Weight: 2.1 gram approxiamtely

Polarity: As marked on diode body

method 208

Mounting position: Any

Terminals: Solderable per MIL-STD-202

Mechanical Data

Low reverse leakage current

Epoxy: UL 94V-0 rate flame retardant

®

GSFA1601 thru GSFA1607

Pb Free Plating Product

GSFA1601 thru GSFA1607

Application

PV diode for Solar Junction Box

Solar power supply and PV system

BY-PASS DIODE application

Pb

16.0 Ampere Isolated Pkg General Purpose Rectifier for PhotoVoltaic

ITO-220AC

Unit : inch (mm)

http://www.thinkisemi.com/

Page 1/2

Rev.04/2014

Positive

Negative

Suffix "R"

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

GSFA

1601

GSFA

1602

GSFA

1603

GSFA

1604

GSFA

1605

GSFA

1606

GSFA

1607

Units

VRRM

50

100

200

400

600

800

1000

V

VRMS

35

70

140

280

420

560

700

V

VDC

50

100

200

400

600

800

1000

V

I(AV)

A

IFSM

A

VF

V

IR

uA

Cj

pF

RθJC

TJ

TSTG

Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

2. Mount on P.C. Board with 2"x3" x0.25" Al-plate

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified @Tc = 100℃

Maximum Instantaneous Forward Voltage @ 16.0A

Maximum DC Reverse Current @ TA=25℃

at Rated DC Blocking Voltage @ TA=125℃

Type Number

Maximum Recurrent Peak Reverse Voltage

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method )

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

1.1

100

Storage Temperature Range

16.0

250

10

250

2.0

-65 to +150

℃/W

℃

.189(4.8)

.406(10.3)

.130(3.3)

.114(2.9)

.055(1.4)

.035(0.9)

.011(0.3)

(2.55)

.1

.032(.8)

.134(3.4)

.165(4.2)

.381(9.7)

.114(2.9)

.098(2.5)

.039(1.0)

MAX

.118(3.0)

Số phần tương tự - GSFA1606

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Thinki Semiconductor Co...	GSFA1606	1Mb / 3P	16.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode
Thinki Semiconductor Co...	GSFA1606R	1Mb / 3P	16.0 Amperes Insulated Reverse Polarity Glass Passivated Avalanche Rectifier Diode

More results

Mô tả tương tự - GSFA1606

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Thinki Semiconductor Co...	GSA1601	543Kb / 2P	16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic
	GPA1601R	497Kb / 2P	16.0 Ampere Reverse Polarity General Purpose Rectifier Diodes
	GPA1601	730Kb / 2P	16.0 Ampere General Purpose Rectifier Diodes for PhotoVoltaic
	GP1601D	266Kb / 2P	16.0 Ampere Dual Doubler Tandem General Purpose Rectifier Diodes
	GP1601A	266Kb / 2P	16.0 Ampere Dual Common Anode General Purpose Rectifier Diodes
	GP1601	307Kb / 2P	16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes
	10A05	697Kb / 2P	10.0 Ampere Plastic Silicon General Purpose Rectifier Diodes
	SBL1630CT	317Kb / 2P	16.0 Ampere Heatsink Pkg Common Cathode Schottky Barrier Rectifier Diodes
	SBL1640CG	337Kb / 2P	16.0 Ampere,45Volt PhotoVoltaic Common Cathode Schottky Barrier Rectifier Diodes
	SBLF1630CT	331Kb / 2P	16.0 Ampere Insulated Pkg Common Cathode Schottky Barrier Rectifier Diodes

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GSFA1606 bảng dữ liệu(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

GSFA1606 bảng dữ liệu(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

Số phần tương tự - GSFA1606

Mô tả tương tự - GSFA1606

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