IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTF03N400

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

110

180

mS

C

iss

435

pF

C

oss

V

19

pF

C

rss

6

pF

t

d(on)

17

ns

t

r

16

ns

t

d(off)

86

ns

t

f

58

ns

Q

g(on)

16.3

nC

Q

gs

V

1.9

nC

Q

gd

8.8

nC

R

thJC

1.78

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

300 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

1.2

A

V

SD

I

3.0

V

t

rr

I

2.8

μs

Resistive Switching Times

V

R

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

PIN 1 = Gate

PIN 2 = Source

PIN 3 = Drain

TAP 4 = Electically Isolated 4000V

Pin 1 = Gate

Pin 2 = Source

Pin 3 = Drain

Tab 4 = Isolated

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.