MJD112 datasheet(2/10 Pages) ONSEMI

tên linh kiện	MJD112

Giải thích chi tiết về linh kiện	Complementary Darlington Power Transistors

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MJD112 (NPN), MJD117 (PNP)

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

100

Vdc

Collector−Base Voltage

VCB

100

Vdc

Emitter−Base Voltage

VEB

Vdc

Collector Current

Continuous

Peak

Adc

Base Current

mAdc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

0.16

W/°C

Total Power Dissipation (Note1)

@ TA = 25°C

Derate above 25°C

1.75

0.014

W/°C

Operating and Storage Junction Temperature Range

TJ, Tstg

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 1)

RqJA

71.4

°C/W

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

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