STTH50W06S datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH50W06S

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Doc ID 023618 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.01 IF

(RMS)

Table 2.

Absolute ratings (limiting values, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) Forward rms current

IF(AV)

Average forward current,

 = 0.5

Tc = 100 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

390

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

+ 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.7

°C / W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Pulse test: tp = 5 ms,

 < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

500

(2)

Pulse test: tp = 380 µs,

 < 2%

Forward voltage drop

Tj = 25 °C

IF = 50 A

2.4

Tj = 150 °C

1.25

1.6

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 50 A, VR = 400 V

dIF/dt = -200 A/µs

QRR

Reverse recovery charge

850

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

tfr

Forward recovery time

Tj = 25 °C IF = 50 A,

VFR = 1.8 V

dIF/dt = 400 A/µs

200

VFP

Forward recovery voltage

Tj = 25 °C

2.8

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