DATA SHEET

SILICON TRANSISTOR

2SC3585

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISOR

DATA SHEET

Document No. P10361EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

©

DESCRIPTION

The 2SC3585 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. The

2SC3585 features excellent power gain with very low-noise figures. The

2SC3585 employs direct nitride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values.

This allows

excellent associated gain and very wide dynamic range.

FEATURES

• NF

1.8 dB TYP.

@f = 2.0 GHz

• Ga

9 dB TYP.

@f = 2.0 GHz

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

100

250

Gain Bandwidth Product

10

GHz

Feed-Back Capacitance

0.3

0.8

pF

Insertion Power Gain

6.0

8.0

dB

Maximum Available Gain

MAG

10

dB

Noise Figure

NF

1.8

3.0

dB

*

Pulse Measurement PW

 350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

Class

R43/Q *

R44/R *

R45/S *

Marking

R43

R44

R45

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

1.5

2

1

3

Marking

PIN CONNECTIONS

1.

2.

3.

Emitter

Base

Collector

2.8±0.2

0.65

+0.1

−0.15