DATA SHEET

SILICON TRANSISTOR

2SC3582

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10359EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1984

©

DESCRIPTION

The 2SC3582 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

FEATURES

• NF

1.2 dB TYP.

@f = 1.0 GHz

• Ga

12 dB TYP.

@f = 1.0 GHz

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65

mA

Total Power Dissipation

600

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

100

250

Gain Bandwidth Product

8

GHz

Feed-Back Capacitance

0.4

0.9

pF

Insertion Power Gain

911

dB

Maximum Available Gain

MAG

13

dB

Noise Figure

NF

1.2

2.5

dB

Class

K

Marking

K

50 to 250

PACKAFE DIMENSIONS

in millimeters (inches)

5.2 MAX.

(0.204 MAX.)

0.5

(0.02)

2.54

(0.1)

1.

2.

3.

Base

Emitter

Collector

EIAJ

JEDEC

IEC

: SC-43B

: TO-92

: PA33

1.27

(0.05)

12

3