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DS9502P bảng dữ liệu(PDF) 3 Page - Dallas Semiconductor |
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DS9502P bảng dữ liệu(HTML) 3 Page - Dallas Semiconductor |
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3 / 3 page ![]() DS9502 3 of 3 102199 PHYSICAL SPECIFICATIONS Size See mechanical drawing Weight 0.5 grams ABSOLUTE MAXIMUM RATINGS* Operating Temperature –40°C to +85°C Storage Temperature –55°C to +125°C Soldering Temperature 260°C for 10 seconds Continuous DC Current Through Package 80 mA * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ELECTRICAL CHARACTERISTICS (-40 °C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Leakage Current IL 30 100 nA 2 Avalanche Voltage VAV 7.4 7.8 V 1,3 Trigger Voltage VTRIGGER 9.0 9.5 V 1 Trigger Current ITRIGGER 600 1000 mA Holding Voltage VHOLD 5.5 V 1 Holding Current IHOLD 30 mA Forward Voltage (-10 mA) VF -0.7 -0.8 V 4 Forward Current (-0.7V) IF -10 -100 mA 4 Maximum Peak Current IPP 2.0 A 5 Continuous Current Through Diode ICC ±160 mA 6 CAPACITANCE (tA=25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Junction Capacitance (5V) CJ5 55 pF 1 Junction Capacitance (0V) CJ0 100 pF 1 THERMAL RESISTANCE PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Junction To Package RΘ JC 75 K/W Junction To Ambient RΘ JA 200 K/W NOTES: 1. All voltages are referenced from Cathode to Anode. 2. At 7.0V. 3. At 0.3 µA. 4. Typical values at room temperature. 5. See pulse specification. 6. In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together, otherwise +80 mA max). |
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