IRG4PC50FDPbF

4

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Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

1.0

1.5

2.0

2.5

-60

-40

-20

0

20

40

60

80

100 120 140 160

V

= 1 5V

80 µs PU LSE W IDTH

GE

A

T , Junction Te m p era ture (°C )

J

I = 78 A

I = 39 A

I = 2 0 A

C

C

C

0

10

20

30

40

50

60

70

25

50

75

100

125

150

T , C ase Tem perature (°C )

C

V

= 15V

GE

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

t , R ectangu lar P ulse D u ration (sec)

1

D = 0.50

0.01

0.02

0.05

0.1 0

0.2 0

SING LE PULSE

(TH ERM AL R ESPO NSE)

P

t 2

1

t

DM

N o tes :

1 . D u ty fa c tor D = t / t

2 . P e a k T = P

x Z

+ T

1

2

J

DM

th JC

C