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NPN SILICON TRANSISTOR

2SC2570A

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

Document No. P10404EJ3V0DS00 (3rd edition)

Date Published November 1999 N CP(K)

Printed in Japan

DATA SHEET

©

1980, 1999

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.

FEATURES

•

Low noise and high gain

•

Wide dynamic range

ORDERING INFORMATION

Part Number

Quantity

2SC2570A

Loose products (500 pcs)

2SC2570A-T

Taping products (Box type) (2 500 pcs)

Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

70

mA

Total Power Dissipation

600

mW

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C