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APT60S20B bảng dữ liệu(PDF) 2 Page - Microsemi Corporation

tên linh kiện APT60S20B
Giải thích chi tiết về linh kiện  HIGH VOLTAGE SCHOTTKY DIODE
PDF  4 Pages
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT60S20B bảng dữ liệu(HTML) 2 Page - Microsemi Corporation

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DYNAMIC CHARACTERISTICS
APT60S20B_S(G)
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
R
θJA
W
T
Torque
MIN
TYP
MAX
.30
40
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN
TYP
MAX
-
55
-
160
-5
-
-
100
-
490
-10
-
-80
-
1100
-27
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 60A, diF/dt = -200A/µs
V
R = 133V, TC = 25°C
I
F = 60A, diF/dt = -200A/µs
V
R = 133V, TC = 125°C
I
F = 60A, diF/dt = -700A/µs
V
R = 133V, TC = 125°C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
0.1
0.3
0.7
D = 0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0.5
0.0218
0.119
0.160
0.00450
0.0119
0.121
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.



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