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UTT120N04L-TQ2-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  120A, 40V N-CHANNEL POWER MOSFET
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UTT120N04L-TQ2-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTT120N04
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-793.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
120
A
Pulsed
IDM
480
A
Avalanche Energy
Single Pulsed
EAS
541.5
mJ
Power Dissipation
PD
100
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
40
V
Drain-Source Leakage Current
IDSS
VDS=32V
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=60A
3.8
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
2890
pF
Output Capacitance
COSS
575
pF
Reverse Transfer Capacitance
CRSS
310
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=30V, VGS=10V, ID=1A,
IG=100µA
160 200
nC
Gate to Source Charge
QGS
35
nC
Gate to Drain Charge
QGD
42
60
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω,
VGS=0~10V
17
ns
Rise Time
tR
140
ns
Turn-OFF Delay Time
tD(OFF)
72
ns
Fall-Time
tF
26
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
120
A
Maximum Body-Diode Pulsed Current
ISM
480
A
Drain-Source Diode Forward Voltage
VSD
IS=120A
1.28
V



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