UTT80N06G-S08-R datasheet(3/7 Pages) UTC

3 / 7 page

UTT80N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-706.c



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) (Note 2)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC=25°C

TC=100°C

Pulsed (Note 3)

IDM

320

Avalanche Current (Note 3)

IAR

Avalanche Energy

Single Pulsed (Note 4)

EAS

480

Repetitive (Note3)

EAR

17.6

Power Dissipation

TO-220/TO-263

147

SOP-8

5.2

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L =0.15mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

θJA

62.5

°C/W

SOP-8

110

Junction to Case

TO-220/TO-263

θJC

0.85

°C/W

SOP-8

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