UT4466G-S08-R datasheet(3/6 Pages) UTC

3 / 6 page

UT4466

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-863.a

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±25

Drain Current

Continuous(Note 2)

TA=25°C

TA=85°C

Pulsed (Note 3)

IDM

Avalanche Current (Note 3, 4)

IAR

Repetitive Avalanche Energy (Note 3, 4) L=0.1mH

EAR

12.8

Power Dissipation (Note 2)

1.42

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air

environment @ TA=25°C. The value in any given application depends on the user's specific board design.

3. Repetitive rating, pulse width limited by junction temperature.

4. IAR and EAR rating are based on low frequency and duty cycles to keep TJ=25°C

THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

θJA

88.4

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note 1)

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=30V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+25V, VDS=0V

+100 nA

Reverse

VGS=-25V, VDS=0V

-100 nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.0

1.45

2.4

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=10A

mΩ

VGS=4.5V, ID=7.5A

mΩ

Forward Transfer Admittance

|YFS|

VDS=5V, ID=10A

2.5

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

CISS

VGS=0V, VDS=15V, f=1.0MHz

478.9

Output Capacitance

COSS

96.7

Reverse Transfer Capacitance

CRSS

61.4

SWITCHING PARAMETERS

Gate Resistance

VDS=0V, VGS=0V, f=1MHz

0.4

1.1

1.6

Ω

Total Gate Charge

VGS=4.5V, VDS=15V, ID=10A

5.0

Total Gate Charge

VGS=10V, VDS=15V, ID=10A

10.5

Gate to Source Charge

QGS

1.8

Gate to Drain Charge

QGD

1.6

Turn-ON Delay Time

tD(ON)

VDS=15V, VGS=10V, RG=3Ω,

RL=1.5Ω

2.9

Rise Time

7.9

Turn-OFF Delay Time

tD(OFF)

14.6

Fall-Time

3.1

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=1A, VGS=0V

0.69

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Guaranteed by design. Not subject to production testing.

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