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UT90N03G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UT90N03G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() UT90N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-847.C ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current TC=25°C (Note 2, 5) ID 90 A TA=25°C (Note 3, 4) 28.8 A Pulsed IDM 90 A Avalanche Current Pulse (L=0.074mH) IAS 90 A Single Pulsed Avalanche Energy (L=0.074mH) EAS 300 mJ Continuous Source-Drain Diode Current TC=25°C (Note 2, 5) IS 90 A TA=25°C (Note 3, 4) 3.13 A Power Dissipation TC=25°C (Note 2) TO-251/TO-252 PD 187 W TO-263 220 TA=25°C (Note 3, 4) 3.75 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Based on TC=25°C. 3. Surface Mounted on 1"x1" FR4 board. 4. t=10sec. 5. Calculated based on maximum junction temperature. Package limitation current is 90A. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1, 2) t≤10sec θJA 40 °C/W Junction to Case Steady State TO-251/TO-252 θJC 0.6 °C/W TO-263 0.5 Notes: 1. Maximum under Steady State conditions is 90°C/W. 2. Surface Mounted on 1" x1" FR4 board. |
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