MBR3045CT datasheet(2/5 Pages) NELLSEMI

2 / 5 page

ABSOLUTE MAXIMUM RATINGS

UNIT

TEST CONDITIONS

PARAMETER

VALUE

Non-repetitive peak surge current

lFSM

SYMBOL

Non-repetitive avalanche energy

Repetitive avalanche current

EAS

lAR

5 μs sine or 3 μs rect.pulse

Following any rated load

condition and with rated

applied

RRM

Surge applied at rated load condition half wave

single phase 60 Hz

1020

200

T = 25°C, l

= 2.0A, L = 5mH

Current decaying linearly to zero in 1 μs

Frequency limited by T maximum V = 1.5 x V typical

ELECTRICAL SPECIFICATIONS

UNIT

TEST CONDITIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

Maximum instantaneous reverse current

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

(1)

VFM

(1)

lRM

dV/dt

T = 25°C

T = 125°C

T = 25°C

T = 125°C

Rated DC voltage

V = 5 V

(test signal range

100 kHz to 1 MHZ) 25°C

Measured from top of terminal to

mounting plane

Rated VR

10000

V/µs

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SEMICONDUCTOR

RoHS

Nell Semiconductors

Maximum average

forward current

lF(AV)

T = 123°C, rated V

VALUE

VOLTAGE RATINGS

UNIT

SYMBOL

PARAMETER

Maximum DC reverse voltage

Maximum working peak reverse voltage

VRWM

VALUE

per device

per diode

I = 15A

I = 30A

I = 15A

I = 30A

0.65

0.8

0.57

0.7

100

650

Peak repetitive forward current per leg

lFRM

Rated V , square wave, 20KHz, T = 123C°

Note

(1) Pulse width < 300 µs, duty cycle < 2%

MBR3045CT Series

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