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MBR2045CT bảng dữ liệu(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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MBR2045CT bảng dữ liệu(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 6 page ![]() ABSOLUTE MAXIMUM RATINGS UNIT TEST CONDITIONS PARAMETER VALUE Non-repetitive peak surge current lFSM SYMBOL Non-repetitive avalanche energy Repetitive avalanche current EAS lAR 5 μs sine or 3 μs rect.pulse Following any rated load condition and with rated V applied RRM Surge applied at rated load condition half wave single phase 60 Hz A mJ A 1060 150 8 2 T = 25°C, l = 2.0A, L = 4mH J AS Current decaying linearly to zero in 1 μs Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS UNIT TEST CONDITIONS PARAMETER SYMBOL Maximum forward voltage drop Maximum instantaneous reverse current Maximum junction capacitance Typical series inductance Maximum voltage rate of change (1) VFM (1) lRM CT LS dV/dt T = 25°C J T = 125°C J T = 25°C J T = 125°C J Rated DC voltage V = 5 V (test signal range R DC 100 kHz to 1 MHZ) 25°C Measured from top of terminal to mounting plane Rated VR 0.7 0.85 1 150 600 8 10000 V/µs nH pF mA V www.nellsemi.com Page 2 of 6 Note (1) Pulse width < 300 µs, duty cycle < 2% SEMICONDUCTOR RoHS RoHS Nell Semiconductors Maximum average forward current lF(AV) 10 A T = 135°C, rated V C R VISO Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min 1500 V VALUE MBR2045CT MBR2060CT VOLTAGE RATINGS UNIT SYMBOL PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM 45 V MBR2045CT MBR2060CT 60 per device per diode 20 I = 10A F I = 20A F I = 10A F I = 20A F 0.65 0.84 0.57 0.72 0.8 0.95 0.1 15 600 MBR2045CT / MBR2060CT Series |
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