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UT9971PL-AA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT9971PL-AA3-R
Giải thích chi tiết về linh kiện  5.0A, 60V N-CHANNEL POWER MOSFET
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UT9971PL-AA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT9971P
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-764.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±25
V
Drain Current
Continuous TA=25°C
ID
5
A
Pulsed
IDM
20
A
Power Dissipation (TA=25°C)
PD
2.7
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
45
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V, TJ=25°C
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+25V
+100 nA
Reverse
VGS=-25V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=5A
50
mΩ
VGS=4.5V, ID=2.5A
60
mΩ
Forward Transconductance
gFS
VDS=10V, ID=5A
7
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
760
pF
Output Capacitance
COSS
188
pF
Reverse Transfer Capacitance
CRSS
35
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=10V, VDS=48V, ID=5A
56
nC
Gate to Source Charge
QGS
5.5
nC
Gate to Drain Charge
QGD
8.8
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=30V, ID=1A, VGS=10V,
RG=3.3Ω, RD=6Ω
40
ns
Rise Time
tR
40
ns
Turn-OFF Delay Time
tD(OFF)
170
ns
Fall-Time
tF
50
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
IS=5A, VGS=0V
1.2
V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, Duty cycle ≤ 2%



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