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USB4S012G-AG6-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện USB4S012G-AG6-R
Giải thích chi tiết về linh kiện  4-CHANNEL ESD SOLUTION FOR USB-HS/USB OTG/USB CHARGER INTERFACE
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USB4S012G-AG6-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

  USB4S012G-AG6-R Datasheet HTML 1Page - Unisonic Technologies USB4S012G-AG6-R Datasheet HTML 2Page - Unisonic Technologies USB4S012G-AG6-R Datasheet HTML 3Page - Unisonic Technologies USB4S012G-AG6-R Datasheet HTML 4Page - Unisonic Technologies  
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USB4S012
Preliminary
TVS
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R215-010.a
ABSOLUTE MAXIMUM RATING over operating free-air temperature range (unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
VBUS Voltage Tolerance
VBUS pin
-0.3~20
V
IO Voltage Tolerance
D+, D–, ID pins
-0.3~6
V
IEC 61000-4-2 Contact Discharge
D+, D–, ID
±10
kV
IEC 61000-4-2 Air-Gap Discharge
D+, D–, ID
±10
kV
IEC 61000-4-2 Contact Discharge
VBUS pin
±10
kV
IEC 61000-4-2 Air-Gap Discharge
VBUS pin
±9
kV
Peak pulse power (tp = 8/20 μs)
D+, D–, ID, VBUS pins
60
W
Peak pulse current (tp = 8/20 μs)
D+, D–, ID, VBUS pins
3
A
Storage Temperature Range
TSTG
-65~125
°C
Operating Free-Air Temperature Range
TA
-40~85
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VBUS Operating Current
IVBUS
VBUS=5V
D+, D–, ID pins open
μA
VBUS=19V
0.1
0.5
IO Port Current
IIO
VIO=2.5V,
VBUS=5V
D+, D–, ID pins
0.1
0.5
μA
Diode Forward Voltage
VD
IIO=8mA
D+, D–, ID pins (lower clamp
diode)
0.6
0.8
0.95
V
VBUS Pin Capacitance
CVBUS
VBUS=5V
11
15
pF
IO Capacitance
CIO
VIO=2.5V
D+, D–, ID pins (DRY package)
0.8
1
pF
Dynamic Resistance
RDYN
IIO=1.5A
D+, D–, ID, and VBUS pins,
including central clamp dioded
during positive ESD pulse
1.2
IIO=1A
D+, D–, ID, and VBUS pins,
including central clamp diode
during negative ESD pulse
1
Breakdown Voltage
VBR
IIO=1mA
D+, D–, ID pins
6
9
V
VBUS pin(s)
20
24



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