UMT1NG-AL6-R datasheet(2/3 Pages) UTC

2 / 3 page

UMT1N

Preliminary

DUAL TRANSISTOR

www.unisonic.com.tw

2 of 3

VER.A



ABSOLUTE MAXIMUM RATINGS (T

A=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-6

Collector Current

-0.15

A (DC)

Collector Power Dissipation

0.15

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-50µA

-60

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA

-50

Emitter-Base Breakdown Voltage

BVEBO

IE=-50µA

-6

Collector CutOff Current

ICBO

VCB=-60V

-0.1

µA

Emitter CutOff Current

IEBO

VEB=-6V

-0.1

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC/IB=-50mA/-5mA

-0.5

DC Current Transfer Ratio

hFE

VCE=-6V, IC=-1mA

120

560

Transition Frequency

VCE=-12V, IE=2mA, f=100MHz

140

MHz

Output Capacitance

Cob

VCB=-12V, IE=0A, f=1MHz

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