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UH11KL-AL6-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UH11KL-AL6-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-027.A ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Collector Current IC 100 mA Power Dissipation PD 150 mW Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=10µA, IE=0 50 V Collector-Emitter Breakdown Voltage (Note 1) BVCEO IC=2.0mA, IB=0 50 V Collector-Base Cutoff Current ICBO VCB=50V, IE=0 100 nA Collector-Emitter Cutoff Current ICEO VCE=50V, IB=0 500 nA Emitter-Base Cutoff Current IEBO VEB=6.0V, IC=0 0.5 mA ON CHARACTERISTICS (Note 2) DC Current Gain hFE VCE=10V, IC=5.0mA 35 60 Output Voltage (on) VOL VCC=5.0V, VB=2.5V, RL=1.0 kΩ 0.2 V ON CHARACTERISTICS (Note 2) Input Resistor R1 7.0 10 13 kΩ Resistor Ratio R1/R2 0.8 1.0 1.2 kΩ Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0% 2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0% |
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