PBSS4041SPN datasheet(9/20 Pages) NXP

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PBSS4041SPN

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Product data sheet

Rev. 2 — 20 October 2010

9 of 20

NXP Semiconductors

PBSS4041SPN

60 V NPN/PNP low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

IC (mA)

10−1

105

104

103

1102

006aac350

400

600

200

800

1000

hFE

(1)

(2)

(3)

VCE (V)

0.0

5.0

4.0

2.0

3.0

1.0

006aac351

8.0

4.0

12.0

16.0

(A)

0.0

IB (mA) = 300

270

240

210

180

150

120

IC (mA)

10−1

105

104

103

1102

006aac352

0.6

1.0

1.4

VBE

(V)

0.2

(1)

(2)

(3)

IC (mA)

10−1

105

104

103

1102

006aac353

0.8

0.4

1.2

1.6

VBEsat

(V)

0.0

(1)

(2)

(3)

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