BSC009NE2LS datasheet(3/10 Pages) ETC2

3 / 10 page

BSC009NE2LS

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

5800

7714

Output capacitance

C oss

1900

2527

Reverse transfer capacitance

Crss

1700

Turn-on delay time

t d(on)

Rise time

t r

Turn-off delay time

t d(off)

Fall time

t f

Gate Charge Characteristics

Gate to source charge

Q gs

Gate charge at threshold

Q g(th)

Gate to drain charge

Q gd

Switching charge

Q sw

Gate charge total

Q g

Gate plateau voltage

V plateau

2.3

Gate charge total

Q g

V DD=12 V, I D=30 A,

V GS=0 to 10 V

126

168

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

Output charge

Q oss

V DD=12 V, V GS=0 V

Reverse Diode

Diode continuous forward current

I S

100

Diode pulse current

I S,pulse

820

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

0.8

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=12 V,

f =1 MHz

V DD=12 V, V GS=10 V,

I D=30 A, R G,ext=1.6 W

V DD=12 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 2.3

page 3

2013-04-26

BSC009NE2LS bảng dữ liệu(PDF) 3 Page - List of Unclassifed Manufacturers

BSC009NE2LS bảng dữ liệu(HTML) 3 Page - List of Unclassifed Manufacturers

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL