MN2510L-R-T3P-T datasheet(2/3 Pages) UTC

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MN2510

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R214-020.a



ABSOLUTE MAXIMUM RATINGS (T

A=25

°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

100

Collector-Emitter Voltage

VCEO

100

Emitter-Base Voltage

VEBO

Collector Current

Base Current

Collector Power Dissipation (TC=25

°C)

125

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A =25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cut-Off Current

ICBO

VCB=100V

µA

Emitter Cut-Off Current

IEBO

VEB=6V

µA

Collector-Emitter Voltage

V(BR)CEO

IC=50mA

100

DC Current Gain (Note 1)

hFE

VCE=4V, IC=12A

120

Collector-Emitter Saturation Voltage

VCE(sat)

IC=12A, IB=1.2A

1.5

Base- Emitter Saturation Voltage

VBE(ON)

VCE=4V, IC=12A

1.8

Cut-Off Frequency

VCE=12V, IE=-1A

MHz

Output Capacitance

Cob

VCB=10V, IE=0A, f=1MHz

200



CLASSIFICATION OF hFE

RANK

hFE1

40~80

60~120

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