MMBTA55L-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA55

Preliminary

AMPLIFIER TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-104.b



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current - Continuous

500

Total device dissipation

TA=25°C

350

Derate above 25°C

2.8

mW/°C

Junction Temperature

125

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

357

°C/W

Note: RJA is measured with the device soldered into a typical printed circuit board.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

UNI

OFF CHARACTERISTICS

Collector-emitter breakdown voltage (note 1)

V(BR)CEO

IC=1.0mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE=100A, Ic=0

Collector cutoff current

ICES

VCE=60V, IB=0

0.1

μA

Collector cutoff current

ICBO

VCB=60V, IE=0

0.1

μA

ON CHARACTERISTICS

DC current gain

hFE

IC=10mA, VCE=1V

100

IC=100mA, VCE=1V

100

Collector-emitter saturation voltage

VCE(SAT)

IC=100mA, IB=10mA

0.25

Base-emitter on voltage

VBE(ON)

IC=100mA, VCE=1V

1.2

SMALL-SIGNAL CHARACTERISTICS

Current gain bandwidth product (note 2)

IC=100mA, VCE=1V,

f=100MHz

MHz

Note 1. Pulse test: PW<=300

s, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

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