K1875L-V-AL3-R datasheet(2/3 Pages) UTC

tên linh kiện	K1875L-V-AL3-R

Giải thích chi tiết về linh kiện	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

PDF	3 Pages

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nhà sản xuất	UTC [Unisonic Technologies]

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K1875

Preliminary

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-103.a

ABSOLUTE MAXIMUM RATINGS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Drain Voltage

VGDS

-20

Gate-Current

Drain Power Dissipation

100

Junction Temperature

125

°C

Storage Temperature Range

TSTG

-55~125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A =25

°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Gate Leakage Current

IGSS

VGS=-15V, VDS=0V

-1.0

Gate-Drain Breakdown Voltage

V(BR)GDS

VDS=0V, IG=-100µA

-20

Drain Current

IDSS

VDS=5V, VGS=0V

Gate-Source Cut-Off Voltage

VGS (OFF)

VDS=5V, ID=1µA

-2.5

Forward Transfer Admittance

|Yfs|

VDS=5V, VGS=0V, f=1kHz

Input Capacitance

Ciss

VDS=5V, VGS=0V, f=1MHz

7.5

Reverse Transfer Capacitance

Crss

VDG=5V, ID=0V, f=1MHz

CLASSIFICATION OF IDSS

RANK

RANGE

6~12

10~20

16~32

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