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BD2378L-K08-5060-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies |
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BD2378L-K08-5060-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() BD2378 Preliminary DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R230-001. a ABSOLUTE MAXIMUM RATINGS (T A=25 °C, unless otherwise specified.) TR1 PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 2 A Collector Dissipation PC 1.25 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~150 °C TR2 PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -2 A Collector Power Dissipation Pc 1.25 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25 °C, unless otherwise specified.) TR1 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 100 V Collector-Emitter Breakdown Voltage BVCEO IC=100mA, IB=0 80 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-Off Current ICBO VCB=100V, IE=0 100 µA Emitter Cut-Off Current IEBO VEB=5V, IC=0 1 mA Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA 0.6 V DC Current Gain hFE (1) IC=150mA,VCE=2V 40 hFE (2) IC=1A,VCE=2V 25 Transition Frequency fT IC=250mA, VCE=10V, f=10MHz 3 MHz TR2 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-1mA, IE=0 -100 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-100mA, IB=0 -80 V Emitter-Base Breakdown Voltage V(BR)EBO IC=-1mA, IE=0 -5 V Collector Cut-Off Current ICBO VCB=-100V, IE=0 -100 µA Emitter Cut-Off Current IEBO VEB=-5V, IC=0 -1 mA DC Current Gain hFE(1) VCE=-2V, IC=-150mA 40 hFE(2) VCE=-2V, IC=-1A 25 Collector-Emitter Saturation Voltage VCE(sat) IC=-1A, IB=-100mA -0.6 V Transition Frequency fT VCE=-10V, IC=-250mA, f=10MHz 3 MHz |
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