13005EC

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R213-022.d



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

850

V

Collector-Base Voltage

850

V

Emitter Base Voltage

9

V

Collector Current

Continuous

4

A

Peak (1)

8

A

Base Current

Continuous

2

A

Peak (1)

4

A

Emitter Current

Continuous

6

A

Peak (1)

12

A

TO-251

10

W

TO-126

8

W

Junction Temperature

-65 ~ +150

°С

Storage Temperature Range

-65 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251

95

°С/W

TO-126

100

Junction to Case

TO-251

13

°С/W

TO-126

16.25