13003DF datasheet(3/4 Pages) UTC

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13003DF

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R223-014.c



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

600

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

Continuous Collector Current

1.5

Power Dissipation

TA=25°C

1.25

TC=25°C

Junction Temperature

150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=0.1mA

600

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA

400

Emitter-Base Breakdown Voltage

BVEBO

IE=0.1mA

Collector Cut-Off Current

ICBO

VCB=600V, IE=0

0.1

Collector-Emitter Cut-Off Current

ICEO

VCE=400V, IB=0

0.1

Emitter-Base Cut-Off Current

IEBO

VEB=9V, IC=0

0.1

DC Current Gain (Note 1)

hFE

VCE=5V, IC=0.2A

Low current and high current hFE2 hFE1 ratio

hFE1/ hFE2

hFE1: VCE=5V, IC=5mA

0.75

0.9

hFE2: VCE=5V, IC=0.2A

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)

IC=1A, IB=0.25A

0.3

0.9

Base-Emitter Saturation Voltage (Note)

VBE(SAT)

IC=1A, IB=0.25A

0.9

1.2

Storage Time

UI9600, IC=0.1A

μs

Rise Time

μs

Fall Time

μs

Transition Frequency

IC=0.1A, VCE=10V, f=1MHz

MHz

Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%



CLASSIFICATION OF hFE

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

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