2SA1013L-P-AB3-R datasheet(2/3 Pages) UTC

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2SA1013

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-049.B



ABSOLUTE MAXIMUM RATINGS (T

A=25

°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-160

Collector-Emitter Voltage

VCEO

-160

Emitter-Base Voltage

VEBO

-6

Collector Current

-1

Base Current

-0.5

Collector Power Dissipation

SOT-89

500

TO-92/TO-92NL

900

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A =25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-Off Current

ICBO

VCB=-150V, IE=0

-1.0

µA

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-1.0

µA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-10mA, IB=0

-160

DC Current Gain

hFE

VCE=-5V, IC=-200mA

320

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-1.5

Base-Emitter Voltage

VBE

VCE=-5V, IC=-5mA

-0.45

-0.75

Transition Frequency

VCE=-5V, IC=-200mA

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz, IE=0



CLASSIFICATION OF hFE

RANK

RANGE

60~120

100~200

160~320

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