2N2575 datasheet(1/4 Pages) DIGITRON

tên linh kiện	2N2575

Giải thích chi tiết về linh kiện	SILICON CONTROLLED RECTIFIER

PDF	4 Pages

Scroll/Zoom	100%

nhà sản xuất	DIGITRON [Digitron Semiconductors]

Trang chủ	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130116

2N2573-2N2579

SILICON CONTROLLED RECTIFIER

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage (1)

2N2573

2N2574

2N2575

2N2576

2N2578

2N2579

VDRM or VRRM

25

50

100

200

400

500

Volts

On-state current

IT(RMS)

25

Amps

Circuit fusing (8.3ms)

I2t

280

A2s

Peak surge current

(Half cycle, 60Hz, TJ = -65° to +125°C)

ITSM

260

Amps

Peak gate power – forward

PGM

5

Watts

Average gate power – forward

PG(AVG)

0.5

Watts

Peak gate current – forward

IGM

2

Amps

Peak gate voltage

Forward

Reverse

VGFM

VGRM

10

5

Volts

Operating junction temperature range

TJ

-65 to +125

°C

Storage temperature range

Tstg

-65 to +150

°C

Thermal resistance, junction to case

R

ӨJC

1.5

°C/W

Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak forward or reverse blocking current

(Rated VDRM or VRRM, gate open)

TJ = 25°C

TJ = 125°C

IDRM, IRRM

-

0.6

10

5

µA

mA

Gate trigger current (continuous dc)

(VD = 7V, RL = 100Ω)

IGT

-

40

mA

Gate trigger voltage (continuous dc)

(VD = 7V, RL = 100Ω)

(VD = rated VDRM, RL = 100Ω, TJ = 125°C)

VGT

-

0.3

0.7

-

3.5

-

Volts

Forward on voltage

(ITM = 20A)

VTM

-

1.1

1.4

Volts

Holding current

(VD = 7V, gate open)

IH

-

10

-

mA

Turn-on time (td + tr)

(IGT = 50mA, IT = 10A, VD = rated VDRM)

tgt

-

1

-

µs

Turn-off time

(IT = 10A, IR = 10A, dv/dt = 20V/µs, TJ = 125°C)

(VD = rated voltage VDRM)

tq

-

30

-

µs

Forward voltage application rate

(exponential)

(Gate open, TJ = 125°C, VD = rated VDRM)

dv/dt

-

30

-

V/µs

Số phần tương tự - 2N2575

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	2N2575	135Kb / 3P	SILICON CONTROLLED RECTIFIERS
New Jersey Semi-Conduct...	2N2575	164Kb / 2P	20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

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Mô tả tương tự - 2N2575

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