UF840

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R502-047.H



INTERNAL PACKAGE INDUCTANCE

PARAMETER

SYMBOL

MIN TYP MAX UNIT

DRAIN INDUCTANCE

Measured from the contact screw on tab to center of die

Measured from the drain lead(6mm from package) to center of die

3.5

nH

4.5

nH

SOURCE INDUCTANCE

Measured from the source lead(6mm from header) to source bond pad

7.5

nH

Remark:

Modified MOSFET symbol showing the internal devices inductances as below.



SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Source to Drain Diode Voltage(Note 1)

2

V

Continuous Source to Drain Current

Note 2

8

A

Pulse Source to Drain Current

32

A

Reverse Recovery Time

210 475 970

ns

Reverse Recovery Charge

2

4.6

8.2

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.