MJE13002G-A-T92-R datasheet(4/9 Pages) UTC

4 / 9 page

MJE13002

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R204-014.C

APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance

Reverse Bias Safe Operating Area and Inductive Switching

Resistive

Switching

pw 5V

DUTY CYCLE? 10%

tr,tf? 10ns

1N4933

0.02

µF

270

+5V

1N4933

+5V

MJE210

2N2222

2N2905

1/2W 100

MJE200

-VBE(off)

T.U.T.

VCC

MR826*

Vclamp

*SELECTEDFOR? 1KV

5.1K

VCE

NOTE

PWand Vcc Adjusted for Desired Ic

RBAdjusted for Desired IB1

1N4933

0.001

µF

+125V

-4.0V

SCOPE

TUT

Coil Data :

GAP for 30 mH/2 A

VCC=20V

Ferroxcube core #6656

Lcoil=50mH

Vclamp=300V

Full Bobbin ( ~ 200 Turns) #20

VCC=125V

RC=125Ω

D1=1N5820 or

Equiv.

RB=47Ω

Output Waveforms

IC(pk)

tf CLAMPED

VCE

TIME

VCE or

Vclamp

OUTPUT WAVEFORMS

t1 Adjusted to

Obtain Ic

Test Equipment

Scope-Tektronics

475 or Equivalent

t1=

Lcoil(Icpk)

Vcc

t2=

Lcoil(Icpk)

Vclamp

+10.3V

25μS

-8.5V

tr,tf<10ns

Duty Cycly=1.0%

RB and Rc adjusted

for desired IB and Ic

Table 2. Typical Inductive Switching Performance

(AMP)

(°C)

TSV

(μs)

TRV

(μs)

TFI

(μs)

TTI

(μs)

0.5

100

1.3

1.6

0.23

0.26

0.30

0.35

0.40

0.30

0.36

100

1.5

1.7

0.10

0.13

0.14

0.26

0.05

0.06

0.16

0.29

1.5

100

1.8

0.07

0.08

0.10

0.22

0.05

0.08

0.16

0.28

Note: All Data Recorded in the inductive Switching Circuit Table 1

Fig 1. Inductive Switching Measurements

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