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CD420840B bảng dữ liệu(PDF) 3 Page - Powerex Power Semiconductors

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Giải thích chi tiết về linh kiện  POW-R-BLOKTM Dual SCR/Diode Isolated Module 40 Amperes / Up to 1800 Volts
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nhà sản xuất  POWEREX [Powerex Power Semiconductors]
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CD420840B bảng dữ liệu(HTML) 3 Page - Powerex Power Semiconductors

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Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR/Diode Isolated Module
40 Amperes / Up to 1800 Volts
Revision Date: 04/28/2009
CD42__40B
CD47__40B
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
IDRM
Up to 1800V, TJ=125°C
20
mA
Repetitive Peak Reverse Leakage Current
IRRM
Up to 1800V, TJ=125°C
20
mA
Peak On-State Voltage
VTM / VFM
ITM / IFM = 200A
1.95
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 125°C, I = 16.7% x πIT(AV) to πIT(AV)
1.0
4.5
V
mΩ
Minimum dV/dt
dV/dt
Tj=125°C, Up to 800V
Tj=125°C, 1200V – 1800V
500
1000
V/µs
V/µs
Turn-Off Time (Typical)
t off
TJ = 125°C
40 - 100
(Typical)
µs
Gate Trigger Current
IGT
Tj= 25°C, VD=6V, Resistive Load
150
mA
Gate Trigger Voltage
VGT
Tj= 25°C, VD=6V, Resistive Load
3.0
Volts
Non-Triggering Gate Voltage
VGDM
Tj=125°C, VD=VDRM
0.25
Volts
Non-Triggering Gate Current
IGDM
Tj=125°C, VD=VDRM
6
mA
Holding Current
IH
Tj= 25°C
150
mA
Latching Current
IL
Tj= 25°C
300
mA
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
DC Operation
RΘJ-C
Per Module, both conducting
Per Junction, both conducting
0.33
0.65
°C/W
°C/W
Thermal Resistance, Case to Sink Lubricated
RΘC-S
Per Module
0.1
°C/W



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