RJL5032DPPM0 datasheet(2/7 Pages) RENESAS

2 / 7 page

RJL5032DPP-M0

Preliminary

R07DS0251EJ0200 Rev.2.00

Page 2 of 6

Mar 06, 2014

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

500

—

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

μA

VDS = 500 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

μA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

—

VDS = 10 V, ID = 1 mA

Static drain to source on state resistance

RDS (on)

—

2.2

2.8

ID = 1.5 A, VGS = 10 V

Note 4

Input capacitance

Ciss

—

265

—

VDS = 25 V

VGS = 0

f = 1 MHz

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

4.5

—

Turn-on delay time

td (on)

—

VDD = 250 V

ID = 1.5 A

VGS = 10 V

Rg = 10

Rise time

—

2.5

—

Turn-off delay time

td (off)

—

Fall time

—

Total gage charge

—

10.3

—

VDD = 400 V

VGS = 10 V

ID = 3 A

Gate to source charge

Qgs

—

1.5

—

Gate to drain charge

Qgd

—

5.2

—

Body-drain diode forward voltage

VDF

—

0.9

1.5

IF = 3 A, VGS = 0

Note 4

Body-drain diode reverse recovery time

trr

—

100

—

IF = 3 A, VGS = 0

VDD = 250 V

diF/dt = 100 A/

μs

Note:

4. Pulse test

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